DMN6069SE N-Channel MOSFET

Diodes

Description

Product Summary BVDSS 60V RDS(ON) Max 69mΩ @ VGS = 10V 100mΩ @ VGS = 4.5V ID TA = +25°C 4.3A 3.5A .
and Applications This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performanc.

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Datasheet Specifications

Part number: DMN6069SE
Manufacturer: DIODES ↗
File Size: 558.94 KB
Datasheet: DMN6069SE-Diodes.pdf
Description: N-Channel MOSFET

Features

* 100% Unclamped Inductive Switch (UIS) Test in Production
* Fast Switching Speed
* Low On-Resistance
* Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* This part is qualified to JEDEC standards (as references in AEC-Q) for

Applications

* This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
* Motor controls
* Transformer driving switches
* DC-DC converters
* Power-manage

DMN6069SE Distributors

📁 Related Datasheet

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DMN6069SE N-Channel MOSFET Diodes

Diodes DMN6069SE-like datasheet