* Low RDS(ON)
* Ensures On-State Losses are Minimized
* Small Form Factor Thermally Efficient Package Enables Higher Density End Products
* Occupies just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 &
DMT6015LFV Datasheet (531.48 KB)
DMT6015LFV
531.48 KB
60v n-channel mosfet.
ADVANCE INFORMATION
Product Summary
BVDSS 60V
RDS(ON) Max 16mΩ @ VGS = 10V 22mΩ @ VGS = 4.5V
ID Max TC = +25°C
35A
28A
DMT6015LFV
60V N-CHANNEL E.
📁 Related Datasheet
DMT6015LFVW - 60V DUAL N-CHANNEL MOSFET
(DIODES)
Product Summary
BVDSS 60V
RDS(ON) Max
16mΩ @ VGS = 10V 22mΩ @ VGS = 4.5V
ID Max TC = +25°C
31.8A 27.6A
Description and Applications
This new gener.
DMT6015LPDW - 60V DUAL N-CHANNEL MOSFET
(DIODES)
DMT6015LPDW
60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
Product Summary
BVDSS 60V
RDS(ON)
18mΩ @ VGS = 10V 24.5mΩ @ VGS = 4.5V
ID TC .
DMT6015LPS - N-Channel MOSFET
(Diodes)
Product Summary
BVDSS 60V
RDS(ON)
16mΩ @ VGS = 10V 24mΩ @ VGS = 4.5V
ID TC = +25°C
31A 24A
Description
This new generation n-channel enhancement m.
DMT6015LSS - N-CHANNEL MOSFET
(Diodes)
DMT6015LSS
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 60V
RDS(ON) Max
16mΩ @ VGS = 10V 21mΩ @ VGS = 4.5V
ID Max TA = +25°C
9.2A
7.
DMT6010LFG - N-Channel MOSFET
(Diodes)
ADVANCE INNEFWORPRMOADTIUOCNT
DMT6010LFG
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 60V
RDS(ON) Max 7.5mΩ @ VGS = 10V 11.5mΩ @ VG.
DMT6010LPS - N-Channel MOSFET
(Diodes)
NEW PRODUCT
Green DMT6010LPS
60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®
Product Summary
BVDSS 60V
RDS(ON)
8mΩ @ VGS = 10V 12mΩ @ VGS = 4.5V
I.
DMT6010LSS - N-Channel MOSFET
(Diodes)
ADAVDAVNACNECDEI INNNFEFOWORRPMRMAOATIDTIOUONCNT
DMT6010LSS
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 60V
RDS(ON) max 8mΩ @ VGS .
DMT6010SCT - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 98A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
:.
