* low on-resistance achievable with low gate drive. D1 D2 Features
* 100 V Complementary in SOIC package Low on-resistance Fast switching speed Low voltage (VGS = 4.5 V) gate drive G1 S1 Q1 N-Channel G2 S2 Q2 P-Channel Applications
ZXMC10A816N8 Datasheet (216.58 KB)
ZXMC10A816N8
216.58 KB
Dual mosfet.
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A Product Line of Diodes Incorporated
ZXMC10A816N8 100V SO8 Complementary Dual enhancement mode MOSFET
Summary
Device V(BR)DSS (.
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