Datasheet Details
- Part number
- 501N04A
- Manufacturer
- Directed Energy
- File Size
- 110.34 KB
- Datasheet
- 501N04A_DirectedEnergy.pdf
- Description
- RF Power MOSFET
501N04A Description
Directed Energy, Inc.An DE150-501N04A RF Power MOSFET Preliminary Data Sheet IXYS Company N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg.501N04A Features
* SG1 SG2 GATE = = = = 500 V 4.5 A 1.5 Ω 80W Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 PDHS VDGR VGS VGSM ID25 IDM
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