Part number:
DFF4N60
Manufacturer:
DnI
File Size:
0.98 MB
Description:
N-channel mosfet.
* High ruggedness RDS(on) (Max 2.5 )@VGS=10V 1. Gate { { { N-Channel MOSFET 2. Drain BVDSS = 600V RDS(ON) = 2.5 ohm ID = 4A 3. Source Gate Charge (Typical 25nC) Improved dv/dt Capability 100% Avalanche Tested General Description This N-channel enhancement mode field-effect power transistor using D
DFF4N60
DnI
0.98 MB
N-channel mosfet.
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