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DFU1N60

N-Channel MOSFET

DFU1N60 Features

* N-Channel MOSFET 2.Drain BVDSS = 600V RDS(ON) = 11.5 ohm ID = 1.0A High ruggedness RDS(on) (Max 11.5 Ω )@VGS=10V Gate Charge (Typical 7nC) Improved dv/dt Capability 100% Avalanche Tested 1.Gate 3.Source General Description This N-channel enhancement mode field-effec

DFU1N60 General Description

This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The I-PAK pkg is well suited for cha.

DFU1N60 Datasheet (635.15 KB)

Preview of DFU1N60 PDF

Datasheet Details

Part number:

DFU1N60

Manufacturer:

DnI

File Size:

635.15 KB

Description:

N-channel mosfet.

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DFU1N60 N-Channel MOSFET DnI

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