Part number:
DFU2N60
Manufacturer:
DnI
File Size:
657.18 KB
Description:
N-channel mosfet.
* High ruggedness RDS(on) (Max 5.5 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability 100% Avalanche Tested 1. Gate { { { 2. Drain BVDSS = 600V RDS(ON) = 5.5ohm ID = 2.1A 3. Source General Description This N-channel enhancement mode field-effect power transistor using DI semiconductor’s
DFU2N60
DnI
657.18 KB
N-channel mosfet.
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