DFU2N60 Datasheet, Mosfet, DnI

DFU2N60 Features

• Mosfet High ruggedness RDS(on) (Max 5.5 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability 100% Avalanche Tested 1. Gate { { { 2. Drain BVDSS = 600V RDS(ON) = 5.5ohm ID = 2.1A 3.

PDF File Details

Part number:

DFU2N60

Manufacturer:

DnI

File Size:

657.18kb

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📄 Datasheet

Description:

N-channel mosfet. This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intend

TAGS

DFU2N60

DnI

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