DP185HDI
Dopoint
2.12MB
Tft lcd.
TAGS
📁 Related Datasheet
DP1800 - Quasi-Resonant PSR CC/CV PWM Power Switch
(DEVELOPER MICROELECTRONICS)
DP1800
Quasi-Resonant PSR CC/CV PWM Power Switch
FEATURES
Low Cost Solution Built-in 800V power BJT Quasi-Resonant Primary Side Regulation
(QR-PS.
DP1801B - Quasi-Resonant PSR CC/CV PWM Power Switch
(DEVELOPER MICROELECTRONICS)
DP1801B
Quasi-Resonant PSR CC/CV PWM Power Switch
FEATURES
Low Cost Solution Built-in 800V power BJT Quasi-Resonant Primary Side Regulation
(QR-P.
DP1803 - Quasi-Resonant PSR CC/CV PWM Power Switch
(DEVELOPER MICROELECTRONICS)
DP1803
Quasi-Resonant PSR CC/CV PWM Power Switch
FEATURES
Low Cost Solution Built-in 800V power BJT Quasi-Resonant Primary Side Regulation
(QR-PS.
DP1804 - Quasi-Resonant PSR CC/CV PWM Power Switch
(DEVELOPER MICROELECTRONICS)
DP1804
Quasi-Resonant PSR CC/CV PWM Power Switch
FEATURES
Low Cost Solution Built-in 750V power BJT Quasi-Resonant Primary Side Regulation
(QR-PS.
DP100 - PNP Silicon Transistor
(AUK)
..
Semiconductor
DP100
PNP Silicon Transistor
Features
• Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= -0.25V .
DP100S - PNP Silicon Transistor
(AUK)
Semiconductor
DP100S
PNP Silicon Transistor
Features
• Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= -0.25V Typ. @IC /IB =-400m.
DP104 - DP104
(ETC)
w
w
w
t a .D
S a
e h
U 4 t e
.c
m o
.DataSheetLIST.
..
.
DP10D1200T*1016xx - E2 IGBT
(Danfoss Silicon Power GmbH)
E2 IGBT Modules
Technical specifications
• Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d.
DP10D600Tx1016xx - E2 IGBT
(Danfoss Silicon Power GmbH)
E2 IGBT Modules
Technical specifications
• Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d.
DP10E1200T*1016xx - E2 IGBT
(Danfoss Silicon Power GmbH)
E2 IGBT Modules
Technical specifications
• Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d.