DIM100PHM33-F000 Datasheet - Dynex Semiconductor

Half-Bridge IGBT

* 10µs Short Circuit Withstand

* High Thermal Cycling Capability

* Soft Punch Through Silicon

* Isolated AlSiC Base with AlN Substrates

* Lead Free Construction KEY PARAMETERS VCES VCE(sat)

* (typ) IC (max) IC(PK) (max) 3300V 2.8V 100A 200A

* M

DIM100PHM33-F000

Dynex Semiconductor

308.61 KB

Half-bridge igbt.

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DIM100PHM33-F000 Half-Bridge IGBT Dynex Semiconductor

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