GP1600FSS12 Datasheet - Dynex Semiconductor

GP1600FSS12 Powerline N-Channel Single Switch IGBT Module Advance Information

GP1600FSS12 GP1600FSS12 Powerline N-Channel Single Switch IGBT Module Advance Information Replaces October 1999 version, DS5173-3.0 DS5173-4.0 January 2000 The GP1600FSS12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation dire.

GP1600FSS12 Features

* s s s s s s s (See package details for further information) Fig. 1 Electrical connections - (not to scale) 3/4(E) n - Channel Enhancement Mode High Input Impedance Optimised For High Power High Frequency Operation Isolated Base Full 1200V Capability 1600A Per Module 8(E1) 9(G1) 1/2(C) 7(C1) Fig

GP1600FSS12_DynexSemiconductor.pdf