Datasheet4U Logo Datasheet4U.com

GP1600FSS12 - Powerline N-Channel Single Switch IGBT Module Advance Information

Datasheet Summary

Features

  • s s s s s s s (See package details for further information) Fig. 1 Electrical connections - (not to scale) 3/4(E) n - Channel Enhancement Mode High Input Impedance Optimised For High Power High Frequency Operation Isolated Base Full 1200V Capability 1600A Per Module 8(E1) 9(G1) 1/2(C) 7(C1) Fig.2 Single switch circuit diagram.

📥 Download Datasheet

Datasheet preview – GP1600FSS12

Datasheet Details

Part number GP1600FSS12
Manufacturer Dynex Semiconductor
File Size 88.16 KB
Description Powerline N-Channel Single Switch IGBT Module Advance Information
Datasheet download datasheet GP1600FSS12 Datasheet
Additional preview pages of the GP1600FSS12 datasheet.

📁 Similar Datasheet

  • GP1600 - (GP1xxx) High Voltage Diode Rectifiers (Diotec Electronics)
  • GP1601 - 16.0 Ampere Dual Common Cathode General Purpose Rectifier Diodes (Thinki Semiconductor)
  • GP1601 - Glass Passivated Rectifiers (Taiwan Semiconductor)
  • GP1602 - 16.0 Ampere Dual Common Cathode General Purpose Rectifier Diodes (Thinki Semiconductor)
  • GP1602 - Glass Passivated Rectifiers (Taiwan Semiconductor)
  • GP1603 - 16.0 Ampere Dual Common Cathode General Purpose Rectifier Diodes (Thinki Semiconductor)
  • GP1603 - Glass Passivated Rectifiers (Taiwan Semiconductor)
  • GP160306-CSC3 - SMD Type Green Emitter (CT Micro)
  • GP1604 - 16.0 Ampere Dual Common Cathode General Purpose Rectifier Diodes (Thinki Semiconductor)
  • GP1604 - Glass Passivated Rectifiers (Taiwan Semiconductor)
Other Datasheets by Dynex Semiconductor

Full PDF Text Transcription

Click to expand full text
GP1600FSS12 GP1600FSS12 Powerline N-Channel Single Switch IGBT Module Advance Information Replaces October 1999 version, DS5173-3.0 DS5173-4.0 January 2000 The GP1600FSS12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry. Fast switching times allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching.
Published: |