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GP1600FSS12 Datasheet - Dynex Semiconductor

GP1600FSS12 - Powerline N-Channel Single Switch IGBT Module Advance Information

GP1600FSS12 GP1600FSS12 Powerline N-Channel Single Switch IGBT Module Advance Information Replaces October 1999 version, DS5173-3.0 DS5173-4.0 January 2000 The GP1600FSS12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module.

Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion.

The high impedance gate simplifies gate drive considerations enabling operation dire

GP1600FSS12 Features

* s s s s s s s (See package details for further information) Fig. 1 Electrical connections - (not to scale) 3/4(E) n - Channel Enhancement Mode High Input Impedance Optimised For High Power High Frequency Operation Isolated Base Full 1200V Capability 1600A Per Module 8(E1) 9(G1) 1/2(C) 7(C1) Fig

GP1600FSS12_DynexSemiconductor.pdf

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Datasheet Details

Part number:

GP1600FSS12

Manufacturer:

Dynex Semiconductor

File Size:

88.16 KB

Description:

Powerline n-channel single switch igbt module advance information.

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