GP1600FSS12 Powerline N-Channel Single Switch IGBT Module Advance Information

Dynex Semiconductor

Description

GP1600FSS12 GP1600FSS12 Powerline N-Channel Single Switch IGBT Module Advance Information Replaces October 1999 version, DS5173-3.0 DS5173-4.0 Januar.

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Datasheet Specifications

Part number: GP1600FSS12
Manufacturer: Dynex Semiconductor
File Size: 88.16 KB
Datasheet: GP1600FSS12_DynexSemiconductor.pdf
Description: Powerline N-Channel Single Switch IGBT Module Advance Information

Features

* s s s s s s s (See package details for further information) Fig. 1 Electrical connections - (not to scale) 3/4(E) n - Channel Enhancement Mode High Input Impedance Optimised For High Power High Frequency Operation Isolated Base Full 1200V Capability 1600A Per Module 8(E1) 9(G1) 1/2(C) 7(C1) Fig

Applications

* in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry. Fast switching times allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequenc

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GP1600FSS12 Powerline N-Channel Single Switch IGBT Module Advance Information Dynex Semiconductor

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