* s s s s High Thermal Cycling Capability 800A Per Module Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 800A 1600A APPLICATIONS s s s s High Reliability Inverters Motor Controllers Traction Drives Resonant Conve
GP800DDM18 Datasheet (144.53 KB)
GP800DDM18
Dynex Semiconductor
144.53 KB
Hi-reliability dual switch igbt module advance information.
GP800DDM18
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Hi-Reliability Dual Switch IGBT Module Advance Information
Replaces October 2000 version, DS5364-2.0 DS5364-3.0 January 2001
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