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GP800DDM18 - Hi-Reliability Dual Switch IGBT Module Advance Information

Datasheet Summary

Features

  • s s s s High Thermal Cycling Capability 800A Per Module Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY.

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Datasheet Details

Part number GP800DDM18
Manufacturer Dynex Semiconductor
File Size 144.53 KB
Description Hi-Reliability Dual Switch IGBT Module Advance Information
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GP800DDM18 GP800DDM18 Hi-Reliability Dual Switch IGBT Module Advance Information Replaces October 2000 version, DS5364-2.0 DS5364-3.0 January 2001 FEATURES s s s s High Thermal Cycling Capability 800A Per Module Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 800A 1600A APPLICATIONS s s s s High Reliability Inverters Motor Controllers Traction Drives Resonant Converters 12(C2) 2(C2) 4(E2) 1(E1) 7(C1) 11(G2) 10(E2) 3(C1) 5(E1) 6(G1) The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP800DDM18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.
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