GP800DDS12 Powerline N-Channel Dual Switch IGBT Module

Dynex Semiconductor

Description

GP800DDS12 GP800DDS12 Powerline N-Channel Dual Switch IGBT Module Replaces October 1999 version, DS5172-3.0 DS5172-4.0 January 2000 The GP800DDS12 i.

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Datasheet Specifications

Part number: GP800DDS12
Manufacturer: Dynex Semiconductor
File Size: 105.16 KB
Datasheet: GP800DDS12_DynexSemiconductor.pdf
Description: Powerline N-Channel Dual Switch IGBT Module

Features

* s s s s s s s (See package details for further information) Fig. 1 Electrical connections - (not to scale) 12(C2) 2(C2) 4(E2) 1(E1) 7(C ) 1 n - Channel Enhancement Mode High Input Impedance Optimised For High Power High Frequency Operation Isolated Base Full 1200V Capability 800A Per Arm 11(G2) 1

Applications

* in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry. Fast switching times allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequenc

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GP800DDS12 Powerline N-Channel Dual Switch IGBT Module Dynex Semiconductor

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