* s s s s s s s (See package details for further information) Fig. 1 Electrical connections - (not to scale) 3/4(E) n - Channel Enhancement Mode High Input Impedance Optimised For High Power High Frequency Operation Isolated Base Full 1200V Capability 800A Per Module 8(E1) 9(G1) 1/2(C) 7(C1) Fig.
GP800FSS12 Datasheet (89.13 KB)
GP800FSS12
Dynex Semiconductor
89.13 KB
Powerline n-channel single switch igbt module preliminary information.
GP800FSS12 GP800FSS12 Powerline N-Channel Single Switch IGBT Module Preliminary Information Replaces October 1999 version, DS5239-2.0 DS5239-3.0 Janu.
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