GP800FSS12 Powerline N-Channel Single Switch IGBT Module Preliminary Information

Dynex Semiconductor

Description

GP800FSS12 GP800FSS12 Powerline N-Channel Single Switch IGBT Module Preliminary Information Replaces October 1999 version, DS5239-2.0 DS5239-3.0 Janu.

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Datasheet Specifications

Part number: GP800FSS12
Manufacturer: Dynex Semiconductor
File Size: 89.13 KB
Datasheet: GP800FSS12_DynexSemiconductor.pdf
Description: Powerline N-Channel Single Switch IGBT Module Preliminary Information

Features

* s s s s s s s (See package details for further information) Fig. 1 Electrical connections - (not to scale) 3/4(E) n - Channel Enhancement Mode High Input Impedance Optimised For High Power High Frequency Operation Isolated Base Full 1200V Capability 800A Per Module 8(E1) 9(G1) 1/2(C) 7(C1) Fig.

Applications

* in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry. Fast switching times allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequenc

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GP800FSS12 Powerline N-Channel Single Switch IGBT Module Preliminary Information Dynex Semiconductor

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