GP800FSS12 Datasheet - Dynex Semiconductor

GP800FSS12 Powerline N-Channel Single Switch IGBT Module Preliminary Information

GP800FSS12 GP800FSS12 Powerline N-Channel Single Switch IGBT Module Preliminary Information Replaces October 1999 version, DS5239-2.0 DS5239-3.0 January 2000 The GP800FSS12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation dir.

GP800FSS12 Features

* s s s s s s s (See package details for further information) Fig. 1 Electrical connections - (not to scale) 3/4(E) n - Channel Enhancement Mode High Input Impedance Optimised For High Power High Frequency Operation Isolated Base Full 1200V Capability 800A Per Module 8(E1) 9(G1) 1/2(C) 7(C1) Fig.

GP800FSS12 Datasheet (89.13 KB)