* s Double Side Cooling s High Surge Capability s Low Recovery Charge VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V Conditions DFB54 35 3500 DFB54 34 3400 DFB54 33 3300 DFB54 32 3200 DFB54 31 3100 DFB54 30 3000 Lower voltage grades available. VRSM = VRRM + 100V Outline type co
DFB5435
Dynex
63.30 KB
Fast recovery diode.
DFB54
DFB54
Fast Recovery Diode
Replaces March 1998 version, DS4219-2.4 DS4219-3.0 January 2000
APPLICATIONS
s Power Supplies s Freewheel Diode s Ba.
📁 Related Datasheet
DFB5430 - Fast Recovery Diode
(Dynex)
DFB54
DFB54
Fast Recovery Diode
Replaces March 1998 version, DS4219-2.4 DS4219-3.0 January 2000
APPLICATIONS
s Power Supplies s Freewheel Diode s Ba.
DFB5431 - Fast Recovery Diode
(Dynex)
DFB54
DFB54
Fast Recovery Diode
Replaces March 1998 version, DS4219-2.4 DS4219-3.0 January 2000
APPLICATIONS
s Power Supplies s Freewheel Diode s Ba.
DFB5432 - Fast Recovery Diode
(Dynex)
DFB54
DFB54
Fast Recovery Diode
Replaces March 1998 version, DS4219-2.4 DS4219-3.0 January 2000
APPLICATIONS
s Power Supplies s Freewheel Diode s Ba.
DFB5433 - Fast Recovery Diode
(Dynex)
DFB54
DFB54
Fast Recovery Diode
Replaces March 1998 version, DS4219-2.4 DS4219-3.0 January 2000
APPLICATIONS
s Power Supplies s Freewheel Diode s Ba.
DFB5434 - Fast Recovery Diode
(Dynex)
DFB54
DFB54
Fast Recovery Diode
Replaces March 1998 version, DS4219-2.4 DS4219-3.0 January 2000
APPLICATIONS
s Power Supplies s Freewheel Diode s Ba.
DFB54 - Fast Recovery Diode
(Dynex)
DFB54
DFB54
Fast Recovery Diode
Replaces March 1998 version, DS4219-2.4 DS4219-3.0 January 2000
APPLICATIONS
s Power Supplies s Freewheel Diode s Ba.
DFB50N06 - N-Channel MOSFET
(DnI)
..
DFB50N06
N-Channel MOSFET
Features
■ ■ ■ ■ ■
RDS(on) (Max 0.023 Ω )@VGS=10V Gate Charge (Typical 36nC) Improved dv/dt Capability.
DFB-2004-3 - DFB laser diodes
(Roithner)
DFB-2004-3
Description
2.0 μm DFB laser diodes (in the following a 2004nm device is exemplary presented) show unique device performance to meet the re.
