DFB50N06

N-Channel MOSFET

DnI

DFB50N06 Features

* RDS(on) (Max 0.023 Ω )@VGS=10V Gate Charge (Typical 36nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested 2.Drain BVDSS = 60V 1.Gate 3.Source RDS(ON) = 0.023 ohm ID = 50A General Description This N-channel enhancement mode field-effect power transis

DFB50N06 General Description

This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for battery operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize rds(on) , low gate charge and high r.

DFB50N06 Datasheet (636.20 KB)

DFB50N06 Datasheet Preview — Preview of DFB50N06 PDF

Datasheet Details

Part number:

DFB50N06

Manufacturer:

DnI

File Size:

636.20 KB

Description:

N-channel mosfet.

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DFB50N06 N-Channel MOSFET DnI

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DFB50N06 Features

DFB50N06 General Description

Datasheet Details

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Description:

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