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DFB4N60

N-Channel MOSFET

DFB4N60 Features

* N-Channel MOSFET { High ruggedness RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typical 22nC) Improved dv/dt Capability 100% Avalanche Tested 1. Gate { ◀ 2. Drain BVDSS = 600V

* ▲

* RDS(ON) = 2.5 ohm ID = 4A 3. Source { General Description This N-chan

DFB4N60 General Description

This N-channel enhancement mode field-effect power transistor using D& I semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. TO-263 (D2-Pak) 2 1 3 Absolut.

DFB4N60 Datasheet (721.78 KB)

Preview of DFB4N60 PDF

Datasheet Details

Part number:

DFB4N60

Manufacturer:

DnI

File Size:

721.78 KB

Description:

N-channel mosfet.

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DFB4N60 N-Channel MOSFET DnI

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