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DFB30N06

N-Channel MOSFET

DFB30N06 Features

* Low RDS(on) (0.04Ω )@VGS=10V Low Gate Charge (Typical 27nC) Low Crss (Typical 75pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range 2.Drain BVDSS = 60V 1.Gate 3.Source RDS(ON) = 0.04 ohm ID = 30A General Description This N-c

DFB30N06 General Description

This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for battery operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize rds(on) , low gate charge and high r.

DFB30N06 Datasheet (779.25 KB)

Preview of DFB30N06 PDF

Datasheet Details

Part number:

DFB30N06

Manufacturer:

DnI

File Size:

779.25 KB

Description:

N-channel mosfet.

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DFB30N06 N-Channel MOSFET DnI

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