MA5114 Datasheet - Dynex

MA5114 Radiation hard 1024x4 Bit Static RAM

MA5114 MA5114 Radiation hard 1024x4 Bit Static RAM Replaces June 1999 version, DS3591-4.0 DS3591-5.0 January 2000 The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The design uses a 6 transistor cell and has full static operation with no clock or timing strobe required. Address input buffers are deselected when Chip Select is in the HIGH state. Operation Mode Read Write Standby CS L L H WE H L X I/O D OUT D.

MA5114 Features

* s 3µm CMOS-SOS Technology s Latch-up Free s Fast Access Time 90ns Typical s Total Dose 106 Rad(Si) s Transient Upset >1010 Rad(Si)/sec s SEU

MA5114_DynexSemiconductor.pdf