NTD30
EDI
64.84 KB
High voltage-high current silicon rectifiers.
NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI.
📁 Related Datasheet
NTD3055-094 - Power MOSFET
(ON Semiconductor)
NTD3055-094, NVD3055-094
MOSFET – Power, N-Channel, DPAK/IPAK
12 A, 60 V
Designed for low voltage, high speed switching applications in power
suppl.
NTD3055-150 - Power MOSFET
(ON Semiconductor)
..
NTD3055−150 Power MOSFET 9.0 A, 60 V
N−Channel DPAK
Designed for low voltage, high speed switching applications in power supplies.
NTD3055L104 - N-Channel Power MOSFET
(ON Semiconductor)
MOSFET – Power, N-Channel, Logic Level, DPAK/IPAK
12 A, 60 V
NTD3055L104, NTDV3055L104
Designed for low voltage, high speed switching applications in .
NTD3055L170 - N-Channel Power MOSFET
(ON Semiconductor)
NTD3055L170, NVD3055L170
MOSFET – Power, N-Channel, Logic Level, DPAK/IPAK
9.0 A, 60 V
Designed for low voltage, high speed switching applications i.
NTD30N02 - Power MOSFET
(ON)
NTD30N02 Power MOSFET 30 Amps, 24 Volts
N−Channel DPAK
Designed for low voltage, high speed switching applications in power supplies, converters and p.
NTD30N02T4 - Power MOSFET
(ON)
NTD30N02 Power MOSFET 30 Amps, 24 Volts
N−Channel DPAK
Designed for low voltage, high speed switching applications in power supplies, converters and p.
NTD32N06 - N-Channel DPAK
(ON Semiconductor)
..
NTD32N06 Power MOSFET
32 Amps, 60 Volts, N−Channel DPAK
Designed for low voltage, high speed switching applications in power supp.
NTD32N06L - Power MOSFET
(ON)
NTD32N06L Power MOSFET 32 Amps, 60 Volts, Logic Level
N−Channel DPAK
Designed for low voltage, high speed switching applications in power supplies, co.
