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NTD3808N
Power MOSFET
16 V, 76 A, Single N-Channel, DPAK/IPAK
Features
•ăTrench Technology •ăLow RDS(on) to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices
Applications
•ăDC-DC Converters •ăLow Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current RqJA (Note 1)
VDSS
16
V
VGS
±16
V
TA = 25°C
ID
17
A
TA = 85°C
13
Power Dissipation RqJA (Note 1)
TA = 25°C
PD
Continuous Drain
TA = 25°C
ID
Current RqJA (Note 2)
Steady TA = 85°C
State
Power Dissipation
TA = 25°C
PD
RqJA (Note 2)
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
ID
TC = 85°C
2.
NTD3808N Datasheet
