NTD3813N
NTD3813N is Power MOSFET manufactured by onsemi.
Features
- ăLow RDS(on) to Minimize Conduction Losses
- ăLow Capacitance to Minimize Driver Losses
- ăOptimized Gate Charge to Minimize Switching Losses
- ăThree Package Variations for Design Flexibility
- ăThese are Pb-Free Devices
Applications
- ăDC-DC Converters
- ăHigh Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current Rq JA (Note 1)
VDSS
±16
TA = 25°C
TA = 85°C
Power Dissipation Rq JA (Note 1)
TA = 25°C
Continuous Drain
TA = 25°C
Current Rq JA (Note 2)
Steady TA = 85°C
State
Power Dissipation
TA = 25°C
Rq JA (Note 2)
Continuous Drain
Current Rq JC (Note 1)
TC =...
