NTD35
EDI
64.84 KB
High voltage-high current silicon rectifiers.
NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI.
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NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI.
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(ON Semiconductor)
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12 A, 60 V
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N−Channel DPAK
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(ON Semiconductor)
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NTD32N06 Power MOSFET
32 Amps, 60 Volts, N−Channel DPAK
Designed for low voltage, high speed switching applications in power supp.
