Part number:
F2W04G
Manufacturer:
EIC discrete Semiconductors
File Size:
20.67 KB
Description:
Fast recovery glass passivated bridge rectifiers.
* :
* Glass passivated chip High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Ideal for printed circuit board FAST RECOVERY GLASS PASSIVATED BRIDGE
F2W04G
EIC discrete Semiconductors
20.67 KB
Fast recovery glass passivated bridge rectifiers.
📁 Related Datasheet
F2W005G FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS (EIC discrete Semiconductors)
F2W01G FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS (EIC discrete Semiconductors)
F2W02G FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS (EIC discrete Semiconductors)
F2W06G FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS (EIC discrete Semiconductors)
F2W08G FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS (EIC discrete Semiconductors)
F2W10G FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS (EIC discrete Semiconductors)
F2001 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
F2002 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
F2003 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
F2004 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
TAGS
Image Gallery