Datasheet4U Logo Datasheet4U.com

F2W04G Datasheet - EIC discrete Semiconductors

FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS

F2W04G Features

* :

* Glass passivated chip High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Ideal for printed circuit board FAST RECOVERY GLASS PASSIVATED BRIDGE

F2W04G Datasheet (20.67 KB)

Preview of F2W04G PDF

Datasheet Details

Part number:

F2W04G

Manufacturer:

EIC discrete Semiconductors

File Size:

20.67 KB

Description:

Fast recovery glass passivated bridge rectifiers.

📁 Related Datasheet

F2W005G FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS (EIC discrete Semiconductors)

F2W01G FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS (EIC discrete Semiconductors)

F2W02G FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS (EIC discrete Semiconductors)

F2W06G FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS (EIC discrete Semiconductors)

F2W08G FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS (EIC discrete Semiconductors)

F2W10G FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS (EIC discrete Semiconductors)

F2001 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)

F2002 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)

F2003 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)

F2004 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)

TAGS

F2W04G FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS EIC discrete Semiconductors

Image Gallery

F2W04G Datasheet Preview Page 2

F2W04G Distributor