F2W06G
EIC discrete Semiconductors
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Fast recovery glass passivated bridge rectifiers.
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F2W005G - FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS
(EIC discrete Semiconductors)
F2W005G - F2W10G
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * * * * Glass passivated chip High case dielectric strength High surge curr.
F2W01G - FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS
(EIC discrete Semiconductors)
F2W005G - F2W10G
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * * * * Glass passivated chip High case dielectric strength High surge curr.
F2W02G - FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS
(EIC discrete Semiconductors)
F2W005G - F2W10G
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * * * * Glass passivated chip High case dielectric strength High surge curr.
F2W04G - FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS
(EIC discrete Semiconductors)
F2W005G - F2W10G
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * * * * Glass passivated chip High case dielectric strength High surge curr.
F2W08G - FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS
(EIC discrete Semiconductors)
F2W005G - F2W10G
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * * * * Glass passivated chip High case dielectric strength High surge curr.
F2W10G - FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS
(EIC discrete Semiconductors)
F2W005G - F2W10G
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * * * * Glass passivated chip High case dielectric strength High surge curr.
F2001 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F2002 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F2003 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F2004 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .