Datasheet4U Logo Datasheet4U.com

BYV27 - EPITAXIAL AVALANCHE DIODES

BYV27 Description

www.eicsemi.com BYV27 SERIES EPITAXIAL AVALANCHE DIODES PRV : 50 - 200 Volts Io : 2.0 Amperes .

BYV27 Features

* :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Very fast recovery
* Pb / RoHS Free DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA :
* Case

📥 Download Datasheet

Preview of BYV27 PDF
datasheet Preview Page 2

Datasheet Details

Part number
BYV27
Manufacturer
EIC
File Size
28.71 KB
Datasheet
BYV27-EIC.pdf
Description
EPITAXIAL AVALANCHE DIODES

📁 Related Datasheet

  • BYV27-150GE - GLASS PASSIVATED JUNCTION ULTRAFAST EFFICIENT SILICON RECTIFIER (Gulf Semiconductor)
  • BYV27-1GE - GLASS PASSIVATED JUNCTION ULTRAFAST EFFICIENT SILICON RECTIFIER (Gulf Semiconductor)
  • BYV27-2GE - GLASS PASSIVATED JUNCTION ULTRAFAST EFFICIENT SILICON RECTIFIER (Gulf Semiconductor)
  • BYV27-300 - ULTRAFAST RECOVERY RECTIFIERS (Digitron Semiconductors)
  • BYV27-400 - ULTRAFAST RECOVERY RECTIFIERS (Digitron Semiconductors)
  • BYV27-500 - ULTRAFAST RECOVERY RECTIFIERS (Digitron Semiconductors)
  • BYV27-600 - ULTRAFAST RECOVERY RECTIFIERS (Digitron Semiconductors)
  • BYV20 - Schottky Barrier Rectifier Diodes (NXP)

📌 All Tags

EPITAXIAL AVALANCHE DIODES EIC
EIC BYV27-like datasheet