EPC2024 Datasheet - EPC

EPC2024 Power Transistor

eGaN® FET DATASHEET EPC2024 EPC2024 Enhancement Mode Power Transistor VDS , 40 V RDS(on) , 1.5 mΩ ID , 90 A D G S Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losse.

EPC2024 Datasheet (1.64 MB)