EPC2001C Datasheet - EPC

EPC2001C Power Transistor

eGaN® FET DATASHEET EPC2001C Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 7 mΩ ID , 36 A D G S EPC2001C EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as we.

EPC2001C-EPC.pdf