EPC2012C Datasheet - EPC

EPC2012C Power Transistor

eGaN® FET DATASHEET EPC2012C Enhancement Mode Power Transistor VDS , 200 V RDS (on) , 100 mΩ ID , 5 A D G S EPC2012C EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as .

EPC2012C Datasheet (1.14 MB)