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EPC2012C - Power Transistor

EPC2012C Description

eGaN® FET DATASHEET EPC2012C * Enhancement Mode Power Transistor VDS , 200 V RDS (on) , 100 mΩ ID , 5 A D G S EPC2012C EFFICIENT POWER CON.

EPC2012C Applications

* High Frequency DC-DC Conversion
* Class D Audio
* Wireless Power Transfer Benefits
* Ultra High Efficiency
* Ultra Low RDS(on)
* Ultra Low QG
* Ultra Small Footprint Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Jun

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Datasheet Details

Part number
EPC2012C
Manufacturer
EPC
File Size
1.14 MB
Datasheet
EPC2012C-EPC.pdf
Description
Power Transistor

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Power Transistor EPC
EPC EPC2012C-like datasheet