Datasheet Details
- Part number
- EPC2012C
- Manufacturer
- EPC
- File Size
- 1.14 MB
- Datasheet
- EPC2012C-EPC.pdf
- Description
- Power Transistor
EPC2012C Description
eGaN® FET DATASHEET EPC2012C * Enhancement Mode Power Transistor VDS , 200 V RDS (on) , 100 mΩ ID , 5 A D G S EPC2012C EFFICIENT POWER CON.
EPC2012C Applications
* High Frequency DC-DC Conversion
* Class D Audio
* Wireless Power Transfer
Benefits
* Ultra High Efficiency
* Ultra Low RDS(on)
* Ultra Low QG
* Ultra Small Footprint
Thermal Characteristics
PARAMETER
TYP
UNIT
RθJC Thermal Resistance, Jun
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