EPC2012 Datasheet - EPC

EPC2012 Power Transistor

eGaN® FET DATASHEET EPC2012 Enhancement Mode Power Transistor VDSS , 200 V RDS(ON) , 100 mW ID , 3 A NEW PRODUCT EPC2012 EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure and majority carrier diode provid.

EPC2012 Datasheet (1.54 MB)