EPC2010C Datasheet - EPC

EPC2010C Power Transistor

eGaN® FET DATASHEET EPC2010C EPC2010C Enhancement Mode Power Transistor VDS , 200 V RDS(on) , 25 mΩ ID , 22 A D G S EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as .

EPC2010C Datasheet (1.11 MB)