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EPC2010C - Power Transistor

EPC2010C Description

eGaN® FET DATASHEET EPC2010C EPC2010C * Enhancement Mode Power Transistor VDS , 200 V RDS(on) , 25 mΩ ID , 22 A D G S EFFICIENT POWER CON.

EPC2010C Applications

* High Speed DC-DC conversion
* Class D Audio
* Lidar Benefits
* Ultra High Efficiency
* Ultra Low RDS(on)
* Ultra Low QG
* Ultra Small Footprint Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 1.1 Rθ

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Datasheet Details

Part number
EPC2010C
Manufacturer
EPC
File Size
1.11 MB
Datasheet
EPC2010C-EPC.pdf
Description
Power Transistor

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Power Transistor EPC
EPC EPC2010C-like datasheet