Datasheet Details
- Part number
- EPC2010C
- Manufacturer
- EPC
- File Size
- 1.11 MB
- Datasheet
- EPC2010C-EPC.pdf
- Description
- Power Transistor
EPC2010C Description
eGaN® FET DATASHEET EPC2010C EPC2010C * Enhancement Mode Power Transistor VDS , 200 V RDS(on) , 25 mΩ ID , 22 A D G S EFFICIENT POWER CON.
EPC2010C Applications
* High Speed DC-DC conversion
* Class D Audio
* Lidar
Benefits
* Ultra High Efficiency
* Ultra Low RDS(on)
* Ultra Low QG
* Ultra Small Footprint
Thermal Characteristics
PARAMETER
TYP
UNIT
RθJC Thermal Resistance, Junction-to-Case
1.1
Rθ
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