EPC2007 Datasheet - EPC

EPC2007 Power Transistor

eGaN® FET DATASHEET EPC2007 Enhancement Mode Power Transistor VDSS , 100 V RDS(ON) , 30 mW ID , 6 A NEW PRODUCT EPC2007 EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure and majority carrier diode provide.

EPC2007 Datasheet (1.03 MB)