EPC2206 Datasheet - EPC

EPC2206 Power Transistor

eGaN® FET DATASHEET EPC2206 Automotive 80 V (D-S) Enhancement Mode Power Transistor VDS , 80 V RDS(on) , 2.2 mΩ ID , 90 A AEC-Q101 D G S EPC2206 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and lo.

EPC2206 Datasheet (1.18 MB)