EPC8002 Datasheet (EPC) - Power Transistor

EPC8002, Power Transistor

eGaN® FET DATASHEET EPC8002 Enhancement Mode Power Transistor VDS , 65 V RDS(on) , 480 mΩ ID , 2 A D G S EPC8002 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR.

The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well