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ET830 N-Channel MOSFET

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Description

ET830 5 Amps,500Volts N-Channel MOSFET * .
The ET830 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching.

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Datasheet Specifications

Part number
ET830
Manufacturer
ESTEK
File Size
325.83 KB
Datasheet
ET830-ESTEK.pdf
Description
N-Channel MOSFET

Features

* RDS(ON) = 1.5Ω@VGS = 10 V Low gate charge ( typical 20nC) Fast switching capability Avalanche energy specified Improved dv/dt capability
* Symbol
* Absolute Maximum Ratings(Tc=25℃,unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Drain Currenet Continuous Dra

Applications

* such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

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