ET830 Datasheet - ESTEK

ET830, N-Channel MOSFET

ET830 5 Amps，500Volts N-Channel MOSFET * .
The ET830 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching.

Features

* RDS(ON) = 1.5Ω@VGS = 10 V Low gate charge ( typical 20nC) Fast switching capability Avalanche energy specified Improved dv/dt capability
* Symbol
* Absolute Maximum Ratings(Tc=25℃,unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Drain Currenet Continuous Dra

Applications

* such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

ET830-ESTEK.pdf