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100N10

N-Channel PowerTrench MOSFET

100N10 Features

* RDS(on) = 8.2mΩ ( Typ.)@ VGS = 10V, ID = 75A

* Fast switching speed

* Low gate charge

* High performance trench technology for extremely low RDS(on)

* High power and current handing capability

* RoHS compliant Applications DC to DC converters / Sync

100N10 General Description

This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D G DS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted
* Sy.

100N10 Datasheet (848.07 KB)

Preview of 100N10 PDF

Datasheet Details

Part number:

100N10

Manufacturer:

ETC

File Size:

848.07 KB

Description:

N-channel powertrench mosfet.

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TAGS

100N10 N-Channel PowerTrench MOSFET ETC

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