100N10B - Power MOSFET

ON Semiconductor

Datasheet Details

Low On-Resistance.
Low Gate Charge.
High Speed Switching.
100% Avalanche Tested.
Pb-Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C VDSS 100V RDS(on) Max 7.2 mΩ@15V 8.7 mΩ@10V ID Max 100A Electrical Connection N-Channel 2 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) PW≤10μs, duty cycle≤1% Power Dissipation Tc=25°C Junction Temperature Storage Temperature Source Cu.

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Published: Nov 9, 2018 |