2N5359, 2N5358 Silicon N-channel junction field-effect transistors

Description

2N5358 (SILICON) thru 2N5364 Silicon N-channel junction field-effect transistors depletion mode (Type A) devices designed primarily for general-purpo.

📥 Download Datasheet

2N5359 Datasheet Preview — This datasheet PDF includes multiple part numbers: 2N5359, 2N5358. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: 2N5359, 2N5358
Manufacturer: ETC
File Size: 377.32 KB
Datasheet: 2N5358-ETC.pdf
Description: Silicon N-channel junction field-effect transistors
Note: This datasheet PDF includes multiple part numbers: 2N5359, 2N5358.
Please refer to the document for exact specifications by model.

Applications

* CASE 20 (TO-72) 102 3 4 STYLE 3 PIN 1. 2. 3. 4. DRAIN SOURCE GATE CASE LEAD MAXIMUM RATINGS Rating Forward Gate Current Reverse Gate-Source Voltage Drain-Gate Voltage Total Device Dissipation @TA =25° C Derate above 25°C Storage Temperature Range Operating Junction Temperature Range Symbol IG

2N5359 Distributors

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2N5358 Silicon N-channel junction field-effect transistors ETC

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