2N5307 Datasheet (Fairchild Semiconductor)

2N5307, NPN Darlington Transistor

2N5307 Discrete POWER & Signal Technologies 2N5307 C BE TO-92 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A.

Sourced from Process 05.

See MPSA14 for characteristics.

Absolute Maximum Ratings Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 40 40 12 1.2 -55 to +150 Unit