2N5308 Datasheet - Fairchild Semiconductor

2N5308 NPN Darlington Transistor

2N5308 Discrete POWER & Signal Technologies 2N5308 C BE TO-92 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 40 40 12 1.2 -55 to +150 Unit.

2N5308 Datasheet (23.63 KB)