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2N5718, 2N5716 Datasheet - ETC

2N5718 SILICON LOW NOISE N-CHANNEL JUNCTION FET

2N5716 (SILICON) 2N5717 2N5718 SILICON LOW NOISE N CHANNEL JUNCTION FIELD EFFECT TRANSISTORS Depletion Mode Junction Field Effect Transistors designed for audio amplifiers in low power or battery operated applications. Low Zero- Gate-Voltage Drain Current @ VDS = 15 Vdc IDSS= 5O/lAdc to 250 /lAde - 2N5716 200 /lAde to 1.0 mAde - 2N5717 800 /lAde to 4.0 mAde - 2N 5718 I High Forward Transadmittance @ VDS = 15 Vdc, f = 1.0 kHz Vls= 350 /lmhos (Typ) @ ID = 50 /lA.

2N5716-ETC.pdf

This datasheet PDF includes multiple part numbers: 2N5718, 2N5716. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

2N5718, 2N5716

Manufacturer:

ETC

File Size:

220.87 KB

Description:

Silicon low noise n-channel junction fet.

Note:

This datasheet PDF includes multiple part numbers: 2N5718, 2N5716.
Please refer to the document for exact specifications by model.

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TAGS

2N5718 2N5716 SILICON LOW NOISE N-CHANNEL JUNCTION FET ETC

2N5718 Distributor