2N5718 Datasheet - ETC

2N5718 SILICON LOW NOISE N-CHANNEL JUNCTION FET

2N5716 (SILICON) 2N5717 2N5718 SILICON LOW NOISE N CHANNEL JUNCTION FIELD EFFECT TRANSISTORS Depletion Mode Junction Field Effect Transistors designed for audio amplifiers in low power or battery operated applications. Low Zero- Gate-Voltage Drain Current @ VDS = 15 Vdc IDSS= 5O/lAdc to 250 /lAde - 2N5716 200 /lAde to 1.0 mAde - 2N5717 800 /lAde to 4.0 mAde - 2N 5718 I High Forward Transadmittance @ VDS = 15 Vdc, f = 1.0 kHz Vls= 350 /lmhos (Typ) @ ID = 50 /lA.

2N5718 Datasheet (220.87 KB)