AN957 Datasheet - ETC

AN957 Measuring HEXFETCharacteristics

Index AN-957 (v.Int) Measuring HEXFET®Characteristics (HEXFET is the trademark for International Rectifier Power MOSFETs) Topics covered: Converting the nomenclature from bipolars to MOSFETs P-Channel HEXFET Power MOSFETs Initial settings Breakdown Drain leakage Gate threshold Gate leakage Transconductance .

AN957 Features

* are borne in mind. Table 1 matches some features of HEXFET Power MOSFETs with their bipolar counterparts. The HEXFET Power MOSFET used in all the examples is the IRF630. The control settings given in the examples are those suitable for the IRF630. The user must modify these values appropriately when

AN957_ETC.pdf