B676 Datasheet - ETC

B676 - SILICON POWER TRANSISTOR

*With TO-220C package *High DC Current Gain : hFE=2000 @VCE=-2V, IC=-1A (Min.) *DARLINGTON APPLICATIONS *For switching applications *Hammer drive, pulse motor drive applications *Power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Collector; connected to mounti.

B676_ETC.pdf

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Datasheet Details

Part number:

B676

Manufacturer:

ETC

File Size:

124.87 KB

Description:

Silicon power transistor.

B676 Distributor

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B676 SILICON POWER TRANSISTOR ETC