Part number:
BUV21
Manufacturer:
ETC
File Size:
52.52 KB
Description:
Npn silicon low frequency high power switching transistor.
* 1. Heavy working current.Good temperature stability.Excellent thermal fatigue capability. 2. Good Switching Characteristic. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for Low-speed switch,low frequency power amplify,power adjustment. 5. Quality Class: JP, JT, JCT, GS,
BUV21
ETC
52.52 KB
Npn silicon low frequency high power switching transistor.
📁 Related Datasheet
BUV20 NPN Transistor (Motorola Inc)
BUV20 NPN Silicon Power Transistor (ON Semiconductor)
BUV20 HIGH CURRENT NPN SILICON TRANSISTOR (STMicroelectronics)
BUV20 NPN MULTI - EPITAXIAL POWER TRANSISTOR (Seme LAB)
BUV20 SILICON MULTI-EPITAXIAL NPN TRANSISTOR (TT)
BUV20 Silicon NPN Power Transistor (Inchange Semiconductor)
BUV21 40 AMPERES NPN SILICON POWER METAL TRANSISTOR (Motorola Inc)
BUV21 NPN Silicon Power Transistor (ON Semiconductor)
BUV21 SILICON POWER TRANSISTOR (SavantIC)
BUV21 Bipolar NPN Device (Semelab)