FLM6472-12F Datasheet, Fet, ETC

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FLM6472-12F

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ETC

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📄 Datasheet

Description:

C-band internally matched fet. The FLM6472-12F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in

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FLM6472-12F

ETC

📁 Related Datasheet

FLM6472-12F - C-Band Internally Matched FET (SUMITOMO)
FLM6472-12F FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm (Typ.) High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dB.

FLM6472-18F - C-Band Internally Matched FET (SUMITOMO)
FLM6472-18F FEATURES • • • • • • • High Output Power: P1dB = 43.0dBm (Typ.) High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dB.

FLM6472-25F - C-Band Internally Matched FET (SUMITOMO)
FLM6472-25F FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm (Typ.) High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 38% (Typ.) Low IM3 = -46dB.

FLM6472-4F - C-Band Internally Matched FET (ETC)
FLM6472-4F FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 36% (Typ.) Low IM3 = -46dBc.

FLM6472-4F - C-Band Internally Matched FET (SUMITOMO)
FLM6472-4F FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 36% (Typ.) Low IM3 = -46dBc.

FLM6472-6F - C-Band Internally Matched FET (SUMITOMO)
FLM6472-6F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 38.5dBm (Typ.) • High Gain: G1dB = 9.5dB (Typ.) • High PAE: hadd = 37% (.

FLM6472-8F - C-Band Internally Matched FET (SUMITOMO)
FLM6472-8F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 39.5dBm (Typ.) • High Gain: G1dB = 9.5dB (Typ.) • High PAE: hadd = 36% (.

FLM0910-12F - X-Band Internally Matched FET (ETC)
FLM0910-12F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=40.5dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=25%(Typ.) ・Broa.

FLM0910-12F - X-Band Internally Matched FET (SUMITOMO)
FLM0910-12F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=40.5dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=25%(Typ.) ・Broa.

FLM0910-15F - X-Band Internally Matched FET (SUMITOMO)
FLM0910-15F X-Band Internally Matched FET FEATURES •E High Output Power: P1dB=42.0dBm(Typ.) •E High Gain: G1dB=7.5dB(Typ.) •E High PAE: ηadd=32%(Typ.).