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FLM0910-25F

X-Band Internally Matched FET

FLM0910-25F Features

* High Output Power: P1dB=44dBm(Typ.) High Gain: G1dB=7.0dB(Typ.) High PAE: ηadd=30%(Typ.) Broad Band: 9.5～10.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matched for standard communication bands to provide optimum

FLM0910-25F General Description

The FLM0910-25F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25℃) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Tem.

FLM0910-25F Datasheet (174.14 KB)

Preview of FLM0910-25F PDF

Datasheet Details

Part number:

FLM0910-25F

Manufacturer:

SUMITOMO

File Size:

174.14 KB

Description:

X-band internally matched fet.

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TAGS

FLM0910-25F X-Band Internally Matched FET SUMITOMO

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