GN20
ETC
188.97kb
Gn package xx-lead plastic ssop.
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GN2470 - INSULATED GATE BIPOLAR TRANSISTOR
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Insulated Gate Bipolar Transistor
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► Low voltage drop at high currents ► Industry standard TO-252 (D-Pak) package ► 700V breakdown voltage rat.
GN25L95 - 2.5 Gbps CMOS Burst Mode Laser Driver & Limiting Post Amplifier
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GN2A - GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT
(EIC discrete Semiconductors)
GN2A - GN2M
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * Glass passivated chip High current capability High reliability Low reverse cur.
GN2B - GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT
(EIC discrete Semiconductors)
GN2A - GN2M
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * Glass passivated chip High current capability High reliability Low reverse cur.
GN2D - GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT
(EIC discrete Semiconductors)
GN2A - GN2M
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * Glass passivated chip High current capability High reliability Low reverse cur.
GN2G - GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT
(EIC discrete Semiconductors)
GN2A - GN2M
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * Glass passivated chip High current capability High reliability Low reverse cur.
GN2J - GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT
(EIC discrete Semiconductors)
GN2A - GN2M
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * Glass passivated chip High current capability High reliability Low reverse cur.
GN2K - GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT
(EIC discrete Semiconductors)
GN2A - GN2M
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * Glass passivated chip High current capability High reliability Low reverse cur.