HN20N03

N-Channel Enhancement Mode Power MOSFET

* VDS = 30V,ID = 20A

* High density cell design for ultra low RDS(on)

* Excellent package for good heat dissipation SOT-89 Maximum Ratings (Tc = 25℃ unless otherwise noted

* ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Tc=25℃ Tc=100℃ Pulsed Drai

HN20N03

ETC

532.63 KB

N-channel enhancement mode power mosfet.

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HN20N03 N-Channel Enhancement Mode Power MOSFET ETC

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