HN20N03 - N-Channel Enhancement Mode Power MOSFET

Product Overview

Part number	HN20N03
Manufacturer	ETC
File Size	532.63 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HN20N03 Datasheet
Additional preview pages of the HN20N03 datasheet.

The HN20N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. General

VDS = 30V,ID = 20A.
High density cell design for ultra low RDS(on).
Excellent package for good heat dissipation SOT-89 Maximum Ratings (Tc = 25℃ unless otherwise noted.
) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Tc=25℃ Tc=100℃ Pulsed Drain Current Power Dissipation Tc=25℃ Derate above 25℃ Operating Junction and Storage Temperature Range.
Dran current limited by maximum junction temperature. Symbol VDSS VGSS ID IDM PD TJ,Tstg.

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Published: Oct 31, 2024 |