HN20N03 - N-Channel Enhancement Mode Power MOSFET
HN20N03 Features
* VDS = 30V,ID = 20A
* High density cell design for ultra low RDS(on)
* Excellent package for good heat dissipation SOT-89 Maximum Ratings (Tc = 25℃ unless otherwise noted
* ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Tc=25℃ Tc=100℃ Pulsed Drai
