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ZTX556 - PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS

Features

  • 300 Volt VCEO.
  • 0.5 Amp continuous current.
  • Ptot= 1 Watt ZTX556 ZTX557 C B E.

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Datasheet Details

Part number ZTX556
Manufacturer ETC
File Size 52.52 KB
Description PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS
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Full PDF Text Transcription

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PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ISSUE 1 – JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt ZTX556 ZTX557 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg ZTX556 -200 -200 -5 -1 -0.5 1.0 E-Line TO92 Compatible ZTX557 -300 -300 UNIT V V V A A W °C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT 50 50 75 ZTX556 ZTX557 UNIT CONDITIONS.
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