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ZTX558 - PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR

Key Features

  • 400 Volt VCEO.
  • 200mA continuous current.
  • Ptot= 1 Watt ZTX558 C B E.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSUE 1 – APRIL 94 FEATURES * 400 Volt VCEO * 200mA continuous current * Ptot= 1 Watt ZTX558 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg -400 -400 -5 -200 1 E-Line TO92 Compatible VALUE UNIT V V V mA W °C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).