EBE10UE8AFSA Datasheet (Elpida Memory)

EBE10UE8AFSA, 1GB DDR2 SDRAM SO-DIMM

Pin name A0 to A13 A10 (AP) BA0, BA1, BA2 DQ0 to DQ63 /RAS /CAS /WE /CS0 CKE0 CK0, CK1 /CK0, /CK1 DQS0 to DQS7, /DQS0 to /DQS7 DM0 to DM7 SCL SDA SA0, SA1 VDD VDDSPD VREF VSS ODT0 NC Function Address input Row address Column address Auto precharge Bank select address Data input/output Row address st

DATA SHEET www.DataSheet4U.com 1GB DDR2 SDRAM SO-DIMM EBE10UE8AFSA (128M words × 64 bits, 1 Rank) Specifications Density: 1GB Organization  128M words × 64 bits, 1 rank Mounting 8 pieces of 1G bits DDR2 SDRAM sealed in FBGA Package: 200-pin socket type small outline dual in line memory module (SO-DIMM)  PCB height: 30.0mm  Lead pitch: 0.6mm  Lead-free (RoHS compliant) and Halogen-free Power supply: VDD = 1.8V ± 0.1V Data rate: 800

EBE10UE8AFSA Features

* Double-data-rate architecture; two data transfers per clock cycle

* The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture

* Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the re